Layer-Thickness-Dependent Formation of Si-nanocrystals embedded in Amorphous Si/SiO2 Multilayers

摘要：

Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.

作者: Keyong Chen Xue Feng Yidong Huang

作者单位: State Key Laboratory of Integrated Optoelectronics Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R..China

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 118-119

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）