Layer-Thickness-Dependent Formation of Si-nanocrystals embedded in Amorphous Si/SiO2 Multilayers
Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.
Keyong Chen Xue Feng Yidong Huang
State Key Laboratory of Integrated Optoelectronics Department of Electronic Engineering, Tsinghua University, Beijing 100084, P.R..China
国际会议
Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)
上海
英文
118-119
2010-12-08(万方平台首次上网日期,不代表论文的发表时间)