Growth of n-doped GaAs nanowires by Au-assisted Metalorganic Chemical Vapor Deposition: Effect of n-type Dopants Flux Rates
In recent years, Semiconductor nanowires (NWs) have drawn considerable interest due to their potential applications in electronic and optoelectronic devices 1. Nanowier-based lasers, photo detectors, field effect transistors, and single-electron memory devices have already been demonstrated 2-4. The vapor-liquid-solid (VLS) mechanism, using metal nanometer-scale particles as catalyst, is a commonly used method for semiconductor NWs growth, in which Au nanoparticles (NPs) have been generally used in this method 5, 6. At growth temperature, Au NPs on the substrate surface form liquid alloy NPs with the group III growth precursor(s). Semiconductor NWs are grown from supersaturated liquid alloy NPs.
Jingwei Guo Hui Huang Minjia Liu Xiaomin Ren Shiwei Cai Wei Wang Qi Wang Yongqing Huang Xia Zhang
Key Laboratory of Information Photonics & Optical Communications Ministry of Education Beijing University of Posts and Telecommunications, Beijing
国际会议
Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)
上海
英文
156-157
2010-12-08（万方平台首次上网日期，不代表论文的发表时间）