Light extraction behavior of GaN-based light-emitting diodes with different substrate conditions; nano-size and micro-sized sapphire substrates

摘要：

We fabricated InxGa1xN multiple quantum well (MQW) light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs); the nano-sized PSS (NPSS) and the micro-sized PSS (MPSS), and investigated to enhance the light extraction efficiency (LEE) of LEDs. Furthermore, the micro-Raman and ER spectroscopy were used to compare the strain and piezoelectric fields in the InxGaxN MQWs grown on the different substrate conditions. The light output power (at 20mA) of the MPSS and NPSS are 11.4 mW and 11.6 mW, which are enhanced by 39% and 41% compared with that of the conventional LED, respectively.

作者: Sang-Mook Kim Hwa Sub Oh Kwang Cheol Lee Jong Hyeob Baek

作者单位: Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 160-161

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）