Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer
Self-assembled lateral InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown by metal-organic chemical vapor deposition. A redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.
Y.Yu L.R.Huang P.Tian D.X.Huang
Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
国际会议
Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)
上海
英文
162-163
2010-12-08(万方平台首次上网日期,不代表论文的发表时间)