Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer

摘要：

Self-assembled lateral InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown by metal-organic chemical vapor deposition. A redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.

作者: Y.Yu L.R.Huang P.Tian D.X.Huang

作者单位: Wuhan National Laboratory for Optoelectronics and School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 162-163

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）