Study of the GaInP quantum dots in the AlGaInP-based light emitting diodes
Recently, AlGaInP-based light emitting diodes (LEDs) have experienced an impressive evolution in both device performance and market volume. However, development of new applications is required in order to realize their full potential in areas such as use as a light source for auto focusing in digital cameras, special illumination for particular functions in agriculture, and in full color displays. To enlarge their utility in these applications, it is necessary to fabricate and understand a new structure capable of emitting longer wavelengths of around 700 nm. In particular, AlGaInP heterostructure LEDs are lattice-matched with respect to the GaAs substrate, which limits the emitting spectrum to around 650 nm at the longer peak wavelength side.
Hwa Sub Oh Sang Mook Kim Huyn Haeng Lee Jong Hyeob Baek Joon Seop Kwak
LED Device Team, Korea Photonics Technology Institute (KOPTI), 971-35 Wolchul-dong, Buk-gu,Gwangju 5 LED Device Team, Korea Photonics Technology Institute (KOPTI), 971-35 Wolchul-dong, Buk-gu,Gwangju 5 Department of Printed Electronics Engineering, Sunchon National University, Chonnam 540-742,Korea
国际会议
Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)
上海
英文
184-185
2010-12-08（万方平台首次上网日期，不代表论文的发表时间）