Comparison of TiO2-doped SiO2 films from two organosilicon precursors

摘要：

In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO2-doped SiO2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The optical, chemical and surface properties have been characterized using ellipsometer and SEM with EDAX.

作者: Jaspal P.Bange Lalit S.Patil D.K.Gautam

作者单位: Department of Electronics Engineering, Gunma University, 1-5-1 Tenjin-cho, Kiryu-shi 376-8515, Japan Department of Electronics, North Maharashtra University, Jalgaon -425 001 (M.S.), India

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 242-243

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）