InP Lateral Overgrowth Technology for Silicon Photonics

摘要：

Epitaxial Lateral Overgrowth has been proposed as a key technology of a novel hybrid integration platform for active silicon photonic components. By optimizing the process, a dislocation free InP layer has been successfully grown on top of silicon wafer, which can be used as the base for active devices.

作者: Zhechao Wang Carl Junesand Wondwosen Metaferia Chen Hu Sebastian Lourdudoss Lech Wosinski

作者单位: School of ICT, Royal institute of Technology (Sweden), 16440 Kista, Sweden JORCEP (Joint Research Ce School of ICT, Royal institute of Technology (Sweden), 16440 Kista, Sweden School of ICT, Royal institute of Technology (Sweden), 16440 Kista, Sweden JORCEP (Joint Research Ce

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 377-378

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）