High-speed Modulation in 1.3-μm InAs/GaAs High-Density Quantum Dot Lasers

摘要：

High-speed modulation characteristics of 1.3-μm InAs/GaAs high-density quantum-dot lasers are presented. The high-density quantum-dot active layers provided high net modal gain beyond 40 cm-1. Fabricated Fabry-Perot lasers have exhibited an extended modulation bandwidth and 25-Gbps direct modulation, for the first time, in 1.3-μm quantum dot lasers.

作者: Yu Tanaka Kan Takada Mitsuru Ishida Yoshiaki Nakata Tsuyoshi Yamamoto Masaomi Yamaguchi Kenichi Nishi Mitsuru Sugawara Yasuhiko Arakawa

作者单位: Fujitsu Laboratories Ltd Fujitsu Ltd.,10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan QD Laser Inc. Nano Quine Fujitsu Laboratories Ltd QD Laser Inc., Keihin Bldg.1F, 1-1 Minamiwataridacho, Kawasaki 210-0855, Ja Fujitsu Laboratories Ltd Fujitsu Ltd.,10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Photonics Ele QD Laser Inc., Keihin Bldg.1F, 1-1 Minamiwataridacho, Kawasaki 210-0855, Japan Nano Quine IIS RCAST, University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, Japan

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 577-578

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）