Modelling of the effects of conduction band fluctuations caused by nitrogen clustering in GaInNAs materials
For future optical metro and access networks it is important to develop cost-effective, reliable components with good performance at long telecommunication wavelength window. GaInNAs/GaAs Quantum Well (QW) devices were initially proposed due to the decrease of bandgap 1, reduced temperature sensitivity 2, 3 and better lattice match to substrate GaAs for 1.3 and 1.55 ;m emissions. Unlike other general III- V alloy semiconductors, the large electronegativity of N in GaInNAs and its small covalent radius cause a strong negative bowing parameter and the injection of N to InGaAs dramatically decreases the bandgap thus increases the electron confinement, as modelled successfully by the band anti-crossing (BAC) model 4.
Xiao Sun Judy M.Rorison
Department of Electrical and Electronic Engineering, University of Bristol, United Kingdom, BS8 1TR
国际会议
Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)
上海
英文
583-584
2010-12-08（万方平台首次上网日期，不代表论文的发表时间）