Phonon Engineering in Nanoscale Layered Structures

摘要：

GaN/AlGaN heterostructure thermal conductivity is investigated considering steady-state phonon Boltzman equation and relaxation-time approximation using phonon density of states, average group velocity and phonon relaxation time. It has concluded that proper selection of layer widths yields minimum thermal conduction for considered structure. Also, making asymmetric structure, affects the thermal conduction.

作者: A.Rostami A.Alizade H.Baghban

作者单位: Photonic and Nanocrystal Research Lab.(PNRL), Faculty of Electrical and Computer Engineering, Univer Photonic and Nanocrystal Research Lab.(PNRL), Faculty of Electrical and Computer Engineering, Univer

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 585-586

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）