Advances of AlGaN-based High-Efficiency deep-UV LEDs

摘要：

We demonstrated AlGaN-based multi-quantum-well (MQW) deep-ultraviolet (UV) light-emitting diodes (LEDs) with wavelengths in the range of 222-351 nm, fabricated on low threading dislocation density (TDD) AlN template on sapphire. A high internal quantum efficiency (IQE) of 50-80% was achieved from Al-GaN or quaternary InAlGaN MQWs by fabricating them on low TDD AlN templates. Also, an electron injec-tion efficiency (EIE) was markedly improved by using multi-quantum barrier (MQB). Over 20 mW cw output power was obtained for 256-275 nm LEDs, which will be useful for sterilization applications. The maximum external quantum efficiencies (EQEs) were 1.8 and 2.75% for 247 and 270 nm AlGaN-LEDs, respectively.

作者: Hideki Hirayama

作者单位: RIKEN, 2-1, Hirosawa, Wako, Saitama, 351-0198, Japan

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 641-642

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）