InGaN-Based Nanocolumns for Green Light Emitters

摘要：

Uniform arrays of GaN nanocolumns periodically arranged in triangular-lattice, at the top regions of which InGaN/GaN multiple quantum wells (MQWs) were integrated, were grown on GaN templates by rf-MBE using Ti-mask selective area growth (SAG) technique 1. Here the lattice constant of array L and nanocolumn diameter D were controlled from 200 to 300 nm and from 0.7L to 0.9L, respectively. Figure 1 shows top and birds-eye SEM views of a nanocolumn array with L=275 nm and D=210 nm; excellent uniformity in shape and position was attained.

作者: K.Kishino K.Yamano S.Ishizawa K.Nagashima R.Araki M.Goto A.Kikuchi T.Kouno

作者单位: Dept.of Eng.and Appl.Sciences, Sophia Univ Sophia Nanotechnology Research Center,Sophia Univ., 7-1 K Dept.of Eng.and Appl.Sciences, Sophia Univ CREST, JST, Chiyoda-ku, Tokyo 102-0075, Japan Dept.of Eng.and Appl.Sciences, Sophia Univ

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 643-644

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）