Third Order Silicon (Si) Nitride Side-walled Grating using Silicon-On-Insulator (SOI)

摘要：

We demonstrate three-dimensional simulation of a third order silicon-based grating with fullwidth-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented.

作者: C.E.Png S.T.Lim E.P.Li L.Pan A.J.Danner

作者单位: Advanced Photonics and Plasmonics, IHPC, A*Star, 1 Science Park Road, #01-01, Singapore 117528 Advanced Photonics and Plasmonics, IHPC, A*Star, 1 Science Park Road, #01-01, Singapore 117528 Dept.

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference and Exhibition(2010亚洲光纤通信与光弹博览会及研讨会 ACP 2010)

会议地点: 上海

会议语种:英文

页码: 653-654

在线出版日期: 2010-12-08（万方平台首次上网日期，不代表论文的发表时间）