Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior
Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. In this paper, the distinguish method of lubricating behavior in wafer CMP had been analyzed in theory firstly. Then, the tests of wafer CMP with silicon wafer and deposited copper wafer at different polishing pressure had been done. By the test results, the Stribeck curves obtained showed obvious smooth. But in normal wafer CMP conditions, the friction coefficient of polishing area was above 0.1. By analyzing the experimental results, it was concluded that the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on wafer surface constantly. The contact form between the Wafer and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP.
ZHANG Shengfang SU Jianxiu DU Jiaxi CHEN Xiqu KANG Renke
School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116028, P.R.China Henan Institute of Science and Technology, Xinxiang 453003, P.R.China Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dali
国际会议
桂林
英文
1-6
2010-11-16（万方平台首次上网日期，不代表论文的发表时间）