Fabrication and Photoluminescence of the SnO2 Plate-shape Thin Film and Chrysanthemum-shape Thin Film

摘要：

Two new thin films, Plate-shape Film and Chrysanthemum-shape Film of SnO2, have been grown on single silicon substrates by Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2 and active carbon powders (thermal CVD). The morphology and structure of the prepared nanostructures are determined on the basis of scanning electron microscopy (SEM), field-emission scanning electron microscopy (FESEM), x-ray diffraction (XRD) and photoluminescence spectra (PL) analysis. The peak at 343 nm is the band-to-band emission peak and the corresponding band gap of SnO2 is calculated by using an accurate full-potential linearized augmented planewave method. The new peak at 416 nm in the measured photoluminescence spectra of SnO2 Plate-shape thin film is observed, implying that more luminescence centers exist in SnO2 Plate-shape thin film due to nanocrystals and defects.

作者: B Wang I L Li P Xu

作者单位: School of Electric Science and Technology, Shenzhen University, Shenzhen 518060, China

会议类型: 国际会议

会议名称: The 6th International Conference on Physical and Numerical Simulation of Materials Processing(第六届材料与热加工物理模拟及数值模拟国际学术会议 ICPNS 2010)

会议地点: 桂林

会议语种:英文

页码: 1-10

在线出版日期: 2010-11-16（万方平台首次上网日期，不代表论文的发表时间）