Structures and field emission properties of silicon nanowires irradiated with energetic carbon ion beam

摘要：

In the last decades, SiNWs have attracted a great deal of attention for their one-dimensional nanostructures and size-dependent physical properties, which are promising for applications in the field emission display(FED)1, biosensor2, Chemical sensor3, gas sensor4, photo detector5 and other future nanoscale devices. Recently, numerous researches have demonstrated that the field emission characteristics of the ion implanted Si nanostructure have been greatly improved due to the formation of SiC/Si heterostructure 6. In this paper, the structures and field emission properties of energetic C ion irradiated SiNWs have been investigated and influence of ion irradiation on structures and properties has been discussed.

作者: Guo-an Cheng Fei Zhao Shao-long Wu Dan-dan Zhao Jian-hua Deng Rui-ting Zheng Zhao-xia Ping

作者单位: Key Laboratory of Beam Technology and Material Modification of Ministry of Education,College of Nuclear Science and Technology, Beijing Normal University, Beijing100875, China

会议类型: 国际会议

会议名称: 2010 8th International Vacuum Electron Sources Conference and NANOcarbon(第八届真空电子源和纳米碳国际会议)

会议地点: 南京

会议语种:英文

页码: 75-76

在线出版日期: 2010-10-14（万方平台首次上网日期，不代表论文的发表时间）