Higher Quantum Efficiency by Optimizing GaN Photocathode Structure

摘要：

GaN photocahtode is a promising material for ultrovilet detection and vacuum electrical sources. How to improve quantum efficiency (QE) is always an important aspect in GaN photocathode research work. Although surface activaton plays an important role, the structure design is also a key factor in affecting QE. Introduction of built-in electrical field with field-assist photocathode structure1 or graded-doping structure2 is proved very efficient for QE enhancement, except that the former is more complicated and harder to realize than the latter.

作者: Xiaoqian Fu Bengkang Chang Biao Li Xiaohui Wang Yujie Du Junju Zhang

作者单位: School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Te School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Te

会议类型: 国际会议

会议名称: 2010 8th International Vacuum Electron Sources Conference and NANOcarbon(第八届真空电子源和纳米碳国际会议)

会议地点: 南京

会议语种:英文

页码: 234-235

在线出版日期: 2010-10-14（万方平台首次上网日期，不代表论文的发表时间）