Field Electron Emission from Hydrogen Plasma Treated Nano-ZnO Thin Films

摘要：

In recent years, there has been aroused the considerable interest in realizing the application of zinc oxide (ZnO) to electronic and optical devices 1-3 due to its some outstanding properties, such as wide direct band gap (3.37 eV), high binding energy of excitons (60 meV).However, although in last decade, considerable progress has been achieved in fabricating the devices, the density of field emission (FE) current of the devices are unsatisfactory4-6.we report a hydrogen plasma treated technique. It can effectively improve the field electron emission current density of the nano-ZnO thin films (NZFs).

作者: Wang Xiao-ping Zhang Shi Zhu Yu-zhuan Wang Li-jun Li Huai-hui Liu Xin-xin Mei Cui-yu

作者单位: (College of science, university of shanghai for science and technology, shanghai 200090, CHN) IEEE Conference Publishing 445 Hoes Lane Piscataway, NJ 08854 USA

会议类型: 国际会议

会议名称: 2010 8th International Vacuum Electron Sources Conference and NANOcarbon(第八届真空电子源和纳米碳国际会议)

会议地点: 南京

会议语种:英文

页码: 326-327

在线出版日期: 2010-10-14（万方平台首次上网日期，不代表论文的发表时间）