Surface Photovoltage Spectroscopy Characterization of Varied-doping GaAs

摘要：

The quantum efficiency of negative electron affinity (NEA) GaAs photocathodes mainly depends on the performance of GaAs material. Usually, the uniform-doping structure are used in the photoemissive layer of cathodes. To increase quantum efficiency of cathodes, the varied-doping structure are used. The quantum efficiency can be increased by using the varied-doping structure in GaAs material. The electric field exists in the varied-doping GaAs material, that improves the movement of photoexcited electron toward the surface1.

作者: Y.S.Qian Y.F.Qiu Y.Tao J.X.Shi L.Chen R.G.Fu B.K.Chang

作者单位: School of Electronic Engineering & Photoelectric Technology,Nanjing University of Science & Technolo School of Mechanical Engineering, Nanjing University of Science & Technology School of Electronic Engineering & Photoelectric Technology, Nanjing University of Science & Technol

会议类型: 国际会议

会议名称: 2010 8th International Vacuum Electron Sources Conference and NANOcarbon(第八届真空电子源和纳米碳国际会议)

会议地点: 南京

会议语种:英文

页码: 512-513

在线出版日期: 2010-10-14（万方平台首次上网日期，不代表论文的发表时间）