A novel model of AlGaN/GaN HEMT based on Artificial Neural Network
This paper presents a novel approach to AlGaN/GaN HEMT modeling. AlGaN/GaN HEMT fabrication process is described at first. EEHEMT modeling is implemented according to measurement results. And then artificial neural network (ANN) model based EEHEMT models (as a coarse model) is given and optimized. Comparison between EEHEMT model and ANN model of AlGaN/GaN HEMT shows that latter is more accurate for measured data.
Zhi-Qun Chang Sha Hu Jun Liu Qi-Jun Zhang
Key Lab.of RF Circuit and System ,Education MinistryHangzhou Dianzi UniversityHangzhou, Zhejiang, Ch Department of Electronics Carleton University Ottawa, ON, Canada
国际会议
武汉
英文
129-131
2010-10-10(万方平台首次上网日期,不代表论文的发表时间)