Minimal Area 65nm CMOS Amplifier for Ultra-Wideband Transmitter Applications
This work presents the design of an inductorless, monolithically integrated differential CMOS wideband amplifier covering the frequency range from 0.2 to 10.2 GHz, thus being a suitable candidate for full-band Ultra-Wideband transmitter applications. The amplifier is processed in a 1.2 V 65nm CMOS technology and is comprised of two pseudo differential currentreuse shunt-feedback stages combined with active inductor loads. Measurement results of the bonded chip show a power gain of 10.2 dB and return losses of better than -10 dB for the input and output respectively. The measured output referred 1 dB compression point is above 3.9 dBm within the entire specified frequency range. With a power consumption of 39mW and a die size of only 370μm× 370μm, this circuit represents a capable minimal area alternative to classical distributed amplifier approaches focussing on that frequency range.
O.Schmitz S.K.Hampel K.Mertens M.Tiebout I.Rolfes
Institut f(u)r Hochfrequenztechnik und Funksysteme, Leibniz Universit(a)t Hannover, Germany Appelstr Infineon Technologies Austria AG, Austria Siemensstr.2, 9500 Villach
国际会议
南京
英文
1-4
2010-09-20（万方平台首次上网日期，不代表论文的发表时间）