1-5GHz Wideband Low Noise Amplifier using Active Inductor

摘要：

An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies while the IIP3 is -1 dBm at 3 GHz. Compared with their traditional counterparts, the proposed LNA consumes less chip area 0.16 mm2 and presents better gain and noise figure performance.

作者: A.I.A.Gala R.K.Pokhare H.Kanaya K.Yoshida

作者单位: Graduate School of Information Science and Electrical Engineering Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395, Japan

会议类型: 国际会议

会议名称: 2010国际超宽带会议(ICUWB 2010)

会议地点: 南京

会议语种:英文

页码: 1-4

在线出版日期: 2010-09-20（万方平台首次上网日期，不代表论文的发表时间）