A Fully Integrated 0.13-μm CMOS Receiver Front-End with On-Chip Balun for UWB Applications

摘要：

An ultra-wideband (UWB) 3 to 5 GHz direct conversion receiver front-end is presented. Fabricated in Chinese domestic 0.13-μm CMOS process, the proposed UWB receiver front-end achieves a fully integrated circuit implementation including the on-chip balun. Without any input matching inductor, the on-chip balun is triply used as a balun, a DC ground and an RF signaling path for the capacitor cross-coupled common-gate LNA, which is carefully designed to realize UWB matching and low noise figure. Drawing 18mA from 1.2V, the front-end achieves 20-26 dB power conversion gain with a good input matching (S11<-15dB) and 4.5-5.4dB DSB noise figure, and only occupies an area of 0.48 mm2 including pads.

作者: Shuiyang Lin Xiaowei Sun Jianlong Zhao Zaichen Zhang

作者单位: Shanghai Research Center for Wireless Communications (WiCO), Shanghai, 200335, China Shanghai Instit Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (C National Mobile Communications Research Laboratory, Southeast University

会议类型: 国际会议

会议名称: 2010国际超宽带会议(ICUWB 2010)

会议地点: 南京

会议语种:英文

页码: 1-4

在线出版日期: 2010-09-20（万方平台首次上网日期，不代表论文的发表时间）