A 3.1-4.8 GHz Ultra Wideband Low Noise Amplifier with Robust Full ESD Protection in CMOS

摘要：

A 3.1-4.8GHz two-stage LNA for Group-1 UWB applications featuring current reuse, resistive feedback, complete and high ESD protection design is reported. ESD-RFIC co-design technique was used to ensure whole-chip optimization. The design is implemented in a foundry 0.18μm RFCMOS. Measurement shows a gain of 13.2dB/14.0dB, excellent input reflection of -13.4dB/-17.5dB, noise figure (NF) of 5.11dB/4.79dB for LNA with/without ESD respectively, and best reported ESD protection level of >7.65kV at I/O and >15kV for supply lines.

作者: Xin Wang A.Wang B.Zhao B.Qin S.Fan H.Tang Q.Fang L.Lin J.Liu J.He H.Zhao

作者单位: Department of Electrical Engineering, University of California, Riverside, CA, 92521, USA Department of Electrical Engineering, University of California, Riverside, CA, 92521,USA Freescale Semiconductor, Inc.University of California, Riverside, CA, 92521, USA CitrusCom Semiconductor University of California, Riverside, CA, 92521, USA GSMC University of California, Riverside, CA, 92521, USA

会议类型: 国际会议

会议名称: 2010国际超宽带会议(ICUWB 2010)

会议地点: 南京

会议语种:英文

页码: 1-4

在线出版日期: 2010-09-20（万方平台首次上网日期，不代表论文的发表时间）