Simulation of Heavy Ion Source-Drain Penetration Effect in SOI MOS and bulk MOS

摘要：

The Single Event Effects (SEE) of Silicon On Insulator (SOI) and bulk-silicon NMOS are simulated using the SENTAURUS-TCAD device simulator. The Source-Drain Penetration Effect, which is caused by a heavy ion ，was shown. It is proved that when the feature size of device become less than a certain scale, both Direct Channel Effect and Indirect Channel Effect occur. By comparing the distributions of equipotential lines in the MOSFETs’ channels of the different feature size devices during the ion strikes indirectly, the Source-Drain-Penetration Effect occurs more evidently when the device feature size is getting smaller.

作者: Li yonghong He chaohui Xia chunmei

作者单位: School of Nuclear Science and Technology, Xi’an Jiaotong University, China

会议类型: 国际会议

会议名称: 18th International Conference on Nuclear Engineering(第18届国际核能工程大会 ICONE 18)

会议地点: 西安

会议语种:英文

页码: 1-4

在线出版日期: 2010-05-17（万方平台首次上网日期，不代表论文的发表时间）