Study of Integrator Performance Based on Hybrid SETMOS

摘要：

With the integration of integrated circuits continues to rise, the feature size of integrated devices has entered nanometer. Single electron transistor (SET) is satisfied as nanoelectronic devices, and the SET will be mixed with the composition of nano-MOS devices (SETMOS), is one of the hot current study. SETMOS as a new hybrid device combine the advantages of both, it also has the same Coulomb oscillation characteristics with the SET and MOS high gain. Integrated analog signal processing filters as the basic unit circuit, it must conform to the development of the times. Based on the I characteristics of a SETMOS hybrid device model, a SETMOS integrator is designed, and expounding it’s the operating condition, structure, performance, parameter and characteristics. The transmission performance of the integrator designed is simulated by SPICE. The conclusion is proved by simulation result.

关键词： Single Electron Transistor (SET) SETMOS Integrator Transmission Performance SPICE.

作者: Li Cai Qiang Kang Dang-Yuan Shi

作者单位: Department of Electronic Sciences, Sciences Institute, Air Force Engineering University of CPLA, Chi Science Research Department, Air Force Engineering University of CPLA, China

会议类型: 国际会议

会议名称: 2011 China Control and Decision Conference(2011中国控制与决策会议 CCDC)

会议地点: 四川绵阳

会议语种:英文

页码: 2468-2471

在线出版日期: 2011-05-23（万方平台首次上网日期，不代表论文的发表时间）