THERMAL RESISTANCE OF AU/SAPPHIRE INTERFACE PRIDUCED BY SPUTTER DEPOSITION AND EVAPORATION
In this paper, thermal resistance of Au/sapphire interfaces produced by different deposition methods: sputtering and evaporation was measured and compared. The average thermal resistance of the sputtered Ausapphire interfaces is 35.5×10-9 m2KW-1, in agreement with the theoretical prediction of the phonon acoustic mismatch model and diffusion mismatch model; however, the thermal resistance of the evaporated interfaces is about three times of it. Transmission electron microscopic images show that the sputtered interface is well contacted, on the other hand, pores can be found at the evaporated interface. After annealing at 500℃, the crystal texture of the Au film and the microstructure of the interface changed obviously, however, no significant change has been observed on the interfacial thermal resistance.
Yibin Xu Ryozo Kato Masahiro Goto
Materials Database Station National Institute for Materials Science Tsukuba, Japan, 3050047 Advanced Photovoltaics Center National Institute for Materials Science Tsukuba, Japan, 3050047
国际会议
The Ninth Asian Thermophysical Properties Conference(第九届亚洲热物理性能会议 ATPC 2010)
北京
英文
209-211
2010-10-19（万方平台首次上网日期，不代表论文的发表时间）