9th ASIAN THERMOPHYSICAL PROPERTIES CONFERENCE EFFECTS OF ADDITIVE COMPOSITION AND FABRICATING TECHNOLOGY ON THERMAL CONDUCTIVITY OF SILICON CARBIDE CERAMICS
Thermal conductivities of silicon carbide with and without additives were compared. Effects of additive composition, including C, B4C, AlN, and fabricating technology, including chemical vapor deposition (CVD), pressureless-sintering, reaction-bonding and recrystallization technology, on thermal conductivities of SiC ceramics at 200 to 1200 ℃ were investigated by using the laser flash method. The results showed that the thermal conductivity of SiC with additives was lower than that of the pure polycrystalline one due to lattice impurities, the solid solution or secondary phases with poorer conductivity at grain boundaries. The additions of B4C and AlN reduced obviously the thermal conductivity of silicon carbide, which attributed to the form of solid solution. The thermal conductivity of reaction-bonded SiC was the lowest due to the impurity and high porosity. The recrystallizated SiC had the relatively higher thermal conductivity because of purification, crystallization and growing crystalline grain size though the density was slightly lower.
words: Silicon carbide additives fabricating technology thermal conductivity laser flash method
Liping Yang An Cai Tonggeng Xi
Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS) 1295 DingXi Rd. Shanghai, 200050, China
国际会议
The Ninth Asian Thermophysical Properties Conference(第九届亚洲热物理性能会议 ATPC 2010)
北京
英文
1036-1039
2010-10-19（万方平台首次上网日期，不代表论文的发表时间）