Determination of thermal conductivity of anisotropic SiC crystal using a 3ω method

摘要：

SiC crystal with the excellent heat conduction and thermal stability can be widely used in microelectronic devices and integrated circuit. It is significant for the study of functional type SiC material to get accurate thermal conductivity and thermal diffusivity of SiC crystal. SiC crystal typically have anisotropic thermal properties, measurements must be carried out in both the in-plane and cross-plane directions. A 3ω technique is employed to determine the thermal conductivity of SiC crystal. Three micro-metal probers with the different width are deposited by chemical-vapor deposition (CVD) on the surface of SiC crystal. Each micro-metal prober is used as a heater, and also as a thermometer. The temperature fluctuation signals of a micro-metal prober imply the conduction of heat in different directions in the specimen. Thermal conductivities in both the cross-plane and in-plane directions of SiC crystal are achieved through the fitting value using the 3ω method. The results indicate a strong anisotropy of thermal conduction in the SiC crystal.

关键词： SiC crystal 3ω method anisotropic thermal conductivity

作者: SU Guo-Ping TANG Da-Wei ZHENG Xing-Hua QIU Lin

作者单位: Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing, China, 100190 Graduate Institute of Engineering Thermophysics, Chinese Academy of Sciences,Beijing, China, 100190 Institute of Engineering Thermophysics,Chinese Academy of Sciences,Beijing, China, 100190

会议类型: 国际会议

会议名称: The Ninth Asian Thermophysical Properties Conference(第九届亚洲热物理性能会议 ATPC 2010)

会议地点: 北京

会议语种:英文

页码: 1093-1098

在线出版日期: 2010-10-19（万方平台首次上网日期，不代表论文的发表时间）