TEMPERATURE DEPENDENCE OF THERMAL TRANSPORT PROPERTIES OF ZnXSe100-X (X = 10, 20, 30, 40 & 50)
Measurements of thermo physical properties of ZnxSe100-x (x=10, 20, 30, 40 & 50) chalcogenide material in polycrystalline form have been made in the temperature range from room temperature (20 ℃) to 200 oC using transient plane source (TPS) technique in pellet form. The ZnxSe100-x material has been prepared by mechanical alloying (MA) method. The variation in effective thermal conductivity (λe) and effective thermal diffusivity (χe) with temperature has been determined. Both λe and χe increases with temperature, which can be explained on the basis of the change in structure in the material. Great attention has been given to II-VI group Chalcogenide materials, in recent years, mainly due to their wide range applications as solid-state devices both in Scientific and Technological field (A. B. Seddon et al., 1995). These materials have come under increased scrutiny because of their wide use in cost reduction of devices for photovoltaic applications (M. Husain et al.,2003). Due to their physical and chemical characteristics, selenium based alloys are very important from technological and scientific point of view, mainly those alloys containing germanium or zinc because of their very interesting optical properties. Zinc Selenide is an important material with large direct bandgap, which allows transmission of high-energy photons and high-intensity light fluxes. Owing to this, ZnSe is advantageously used for the manufacture of windows, lenses and partial reflectors for power laser devices (R. N. Bhargavaet al., 1997). Practical application of ZnSe as a working material of opt electronic devices and as a transparent material in power laser optics makes it essential to study the photoelectric and optical properties of this compound under the action of high intensity laser radiation fluxes. These properties of ZnSe crystals are governed by the ensemble of point defects (impurities and intrinsic defects) of the crystal lattice. The use of ZnSe in these fields needs that the alloy should be synthesized inexpensively and suitable for industrial applications (C. E. M. Campose et al., 2002 ; L. Muratov et al., 2001), which tends us to study the behavior of transport properties with temperature. Series of ZnxSe100-x prepared by MA method (L. V. Azaroff, 1988), which has been used for almost two decades to produce many unique materials. This method has several intrinsic advantages, like low temperature processing, easy control of composition, relatively inexpensive equipment, and the possibility of scaling up. Although the MA technique is relatively simple, the physical mechanisms involved are not yet fully understood. In order to make use of any material in industrial applications, a better understanding of their physical mechanisms is desirable. That’s why we have made an attempt to prepare the ZnSe material by MA method and carried out their λe and χe measurements with temperature. The study of thermal transport properties with temperature gives us the information about the scattering of phonons with crystal defects, impurities and dislocations present in them. Thermal conductivity investigations yield useful information on several properties of the material. Studies of the variation of λe and χe of these materials with temperature provides a deeper insight into the nature of the vibrational modes of the crystal lattice and various scattering processes that serve to limit the mean free path of heat carriers i. e. phonons and electrons (holes). Thus it can be used as a tool in the study of imperfections, dislocations and voids, as carriers mean free path is affected by the lattice defects (S. R. Ovshinsky, 1986). In the present paper, an attempt has been made to investigate the thermo physical properties like effective thermal conductivity (λe) & effective thermal diffusivity (χe) with temperature of ZnxSe100-x (x=10,20,30,40 & 50) series prepared by MA, using TPS technique.
V. Kishore Vibhav k. Saraswat N. S. Saxena
Deptt. Of Applied Sci. & Humanities,B. I. E. T. Jhansi-284128, U.P., INDIA Deptt. Of Physics Banasthali University, banasthali-304022 Rajasthan, INDIA Deptt. Of Physics University of Rajasthan Jaipur-302004 INDIA
国际会议
The Ninth Asian Thermophysical Properties Conference(第九届亚洲热物理性能会议 ATPC 2010)
北京
英文
1150-1153
2010-10-19（万方平台首次上网日期，不代表论文的发表时间）