CMOS Wafer Bonding for Back-Side Illuminated Image Sensors Fabrication

摘要：

Backside illuminated CMOS image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. In this technology the fully processed CMOS wafer is bonded to a blank carrier wafer and then back-thinned in order to open the photosensitive sensor area. The process flows of the two main competing wafer bonding technologies used for this manufacturing process (adhesive bonding and low temperature plasma activated direct wafer bonding with polymer layers) will be reviewed.

作者: V. Dragoi A. Filbert S. Zhu G. Mittendorfer

作者单位: EV Group DI E. Thallner Str. 1, 4782 - St. Florian/Inn, Austria

会议类型: 国际会议

会议名称: 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

会议地点: 西安

会议语种:英文

页码: 27-30

在线出版日期: 2010-08-16（万方平台首次上网日期，不代表论文的发表时间）