Die Bonding of Silicon and Other Materials with Active Solder
The surfaces of optoelectronic materials such as silicon, GaAs, nitrides and oxides are known to be very difficult to bond with low melting point solders(<300℃). Small portion of active elements (3.1～4.1wt％ Ti and 0.2％ Ce) added into conventional SnAg solder could improve its solderability with inorganic material surfaces. In this work, some bonding experiments using active solder containing active elements were carried out. Bonding and mechanical behaviors of active solder were compared with SnAg solder preform and PbSn solder paste. The bonded joints were studied using SEM and the distribution of elements using energy-dispersive x-ray (EDX) analysis. Tensile test results revealed that, silicon could be directly bonded with copper, Kovar and silicon without metallization and the bonding strength of siliconsilicon bonding was 3.67MPa. The successful bonding was attributed to the migration of active element to the soldersilicon interface for chemical reaction and the creation of an interfacial layer that contained active element oxide. Such oxide-bondable solders could be useful for 3D packaging and optoelectronic integration.
Cong Peng Mingxiang Chen Sheng Liu
School of Optoelectronic Science and Engineering, HUST, Wuhan, China, 430074 MOEMS Division, Wuhan N School of Mechanical Science and Engineering, HUST, Wuhan, China, 430074 MOEMS Division, Wuhan Natio
国际会议
西安
英文
275-278
2010-08-16（万方平台首次上网日期，不代表论文的发表时间）