Electroplated Metallization Method for Crystalline Silicon Solar Cells
Electroplating metallization method for crystalline silicon solar cell was investigated with new diffusion barrier layer, Ni, crystalline NiW (c-NiW), amorphous NiW (a-NiW). After annealed at various temperatures, sheet resistance of Ni/Cu, c NiW/Cu and a-NiW/Cu was measured to observe the Cu diffusion barrier performance. The rapid increase in sheet resistance of Ni/Cu contact indicated that Ni has the worst diffusion barrier property. XRD analysis revealed that Cu atoms can hardly diffuse through a-NiW barrier layer. However, a-NiW layer has high resistivity, which may influence the solar cell efficiency.
Jie Gao Ming Li Dali Mao
School of Material Science and Engineering, Shanghai Jiao Tong University 800 Dongchuan Road, Shanghai, China
国际会议
西安
英文
310-313
2010-08-16（万方平台首次上网日期，不代表论文的发表时间）