Electromigration-induced interfacial reactions in line-type Cu/Sn/ENIG interconnect
The effect of electromigration (EM) on the solid state interfacial reactions in line-type Cu/Sn/ENIG interconnect was investigated under the current density of 5.0×103 A/cm2 at 150 oC for 100 h and 200 h. The Cu/Sn/ENIG specimens were also aged at the same temperature and durations for comparison. After soldering, Cu6Sn5 and Ni3Sn4 IMCs formed at the Cu/Sn and ENIG/Sn interfaces, respectively. During aging time, a thin Cu3Sn layer formed beneath the Cu6Sn5 at the Cu/Sn interface, and the original Ni3Sn4 transformed into (Cu,Ni)6Sn5 IMC at the ENIG/Sn interface. A thin Ni3P film was detected at the ENIG/Sn interface after aging for 200 h. During EM, when the electrons flowed from the Cu side to the ENIG side, the type of interfacial IMCs kept unchanged at Cu/Sn interface for 100 h and 200h, while the origin Ni3Sn4 transformed into (Cu,Ni)6Sn5 IMC at the ENIG/Sn interface for 100 h and 200h. When the electrons flowed toward the Cu side, high current density induced Ni-P consumption and EMinduced the formation of nearly all (Ni,Cu)3Sn4 IMC in solder near the ENIG/Sn interface were observed. The EM-assisted crystallization of electroless Ni-P was more noticeable with increasing time, and a thin NiSnP layer formed on the thick Ni3P layer at the ENIG/Sn interface for 200 h. Little Ni was detected at the Cu/Sn interface when it acted as the anode side.
Shaoming Zhou Mingliang Huang Leida Chen
Electronic Packaging Materials Laboratory School of Materials Science & Engineering Dalian University of Technology Dalian 116024, China
国际会议
西安
英文
467-471
2010-08-16（万方平台首次上网日期，不代表论文的发表时间）