Characteristics of high frequency and high density Through Silicon Vias (TSVs)

摘要：

TSV has now been a hotspot of the industry for years. Comparing with the wire-bonding, the technology populated in the last decade, Through Silicon Via (TSV) has merits of shorter wiring route, better signal integrity, larger bandwidth, lower power consumption and smaller packaging size. Undoubtedly, the TSV is treated by the industry to be the next generation of packaging solution to replace the wire-bonding. However, the TSV engineering has to conquer several difficulties, e.g. drilling technique, via filling technique, via filling material, stacking and bonding technique, and handling after the wafer thinning, etc. Therefore the standardization of the TSV still has a long way to go. This paper illustrates the initial achievement concerning with via filling material and corresponding high frequency and high density advantages that acquired by Institute of Microelectronics, Chinese Academy of Sciences.

关键词： Through silicon via TSV tungsten copper standardization via filling high frequency high density

作者: Wang Qidong Daniel Guidotti Guo Xueping Wang Huijuan Dai Fengwei Zhou Jing Gao Wei Li Jun Cao Liqiang Wan Lixi

作者单位: Institute of Microelectronics Chinese Academy of Sciences No. 3, BeiTuCheng West Road, Chaoyang dist Georgia Institute of Technology, Atlanta, USA

会议类型: 国际会议

会议名称: 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

会议地点: 西安

会议语种:英文

页码: 552-555

在线出版日期: 2010-08-16（万方平台首次上网日期，不代表论文的发表时间）