High Frequency Resistance calculation and modeling of Through Silicon Vias

摘要：

Through Silicon Via (TSV) is the primary interconnection technology in three dimensional integrated circuits (3DICs). The high frequency resistance of the TSV needs to be calculated and modeled. In this paper, the high resistance value is calculated by the simplify Bessel function, and increases proportionally to the square root of frequency, it is frequency dependent but not compatible to SPICE tools. A frequency independent three deep resistor and inductor ladder was proposed to model the frequency dependent resistance property of the TSV. The results denote that the model has high accuracy.

作者: Yuanjun Liang Ye Li

作者单位: Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhe Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhe

会议类型: 国际会议

会议名称: 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

会议地点: 西安

会议语种:英文

页码: 563-566

在线出版日期: 2010-08-16（万方平台首次上网日期，不代表论文的发表时间）