A study of high-density embedded capacitor for silicon-substrate package
Rapidly growing performance and mixed-signal integration is driving the need for product and component miniaturization in electronics applications. Embedded passive technology is a potentially attractive solution to replace discrete passives. Embedded capacitors are widely used for broad range of applications including filtering, tuning and power-bus decoupling in the substrate. Micro-Electron-Mechanical System (MEMS) process based on silicon and deep etching 3D patterns on silicon substrate is used. The fabrication process and properties of a semiconductor decoupling capacitor with high capacitance density is reported in this paper. Measurement results indicate that the capacitance density can reach 12nF/mm which is 10-12 times that planar semiconductor capacitors, and that the decoupling frequency range is between from 10MHz to 3.2GHz.
Huijuan Wang Fengwei Dai Daniel Guidotti Yao Lv Liqiang Cao Lixi Wan
Institute of Microelectronics of Chinese Academy of Sciences B503, 3＃, BEITUCHENG West, CHAOYANG District, Beijing, 100029, China
国际会议
西安
英文
843-846
2010-08-16（万方平台首次上网日期，不代表论文的发表时间）