The study of Si/metal/GaN fusion bonding

摘要：

GaN-based light-emitting diodes (LEDs) grown on sapphire substrates are integrated with Si by fusion bonding technique. GaN-based LEDs coated with Sn/Au are joined to Si coated with Ti/Au at 300 in a flowing nitrogen ambient for 30 min. ℃ Sapphire substrates are separated from the samples by laser lift-off (LLO) forming GaN-based LEDs/Sn/Au/Ti/Au/Si structures. Microscopy image, observed from the transparent GaN films, shows the uniform bonding interfaces free of air bubbles. The turn-on voltage of vertical GaN-based LEDs on Si decreases from 3.2v to 3.0v.

作者: Wang Ting Xu Lixin Cui zhanzhong

作者单位: School of Aerospace Science and Engineering,Beijing Institute of Technology,Beijing 100081 China

会议类型: 国际会议

会议名称: The 2nd International Symposium on Systems and Control in Aeronautics and Astronautics(第二届航空航天系统与控制国际会议 ISSCAA 2008)

会议地点: 深圳

会议语种:英文

页码: 420-421

在线出版日期: 2008-12-10（万方平台首次上网日期，不代表论文的发表时间）