Intrinsic defects in annealed unintentionally doped epitaxial 4H-SiC

摘要：

Annealing series were performed to investigate the thermal behaviors of intrinsic defects in unintentionally doped 4H-SiC prepared by Low Pressure Chemical Vapor Deposition (LPCVD). Only one Electron Spin Resonance (ESR) peak and a wider green-yellow photoluminescence (PL) band are detected, which means the native defects consist of carbon vacancy (Vc) and complex-compounds-related Vc. The total concentration of intrinsic defects is increased and reaches its maximum at 1573K, then decreased with elevating anneal temperature. The variety of the intrinsic defects is attributed to the process of stabilizing intrinsic defects and a strong interaction among the intrinsic defects during the annealing.

关键词： Electron Spin Resonance intrinsic defects photoluminescence annealing treatment

作者: Cheng Ping Zhang Yuming Zhang Yimen Wang Ming Zhang Xiaomin

作者单位: Ningbo Dahongying University, Ningbo, Zhejiang, 315175, China Xidian University, Xian, Shaanxi, 710071, China

会议类型: 国际会议

会议名称: 2010 International Conference on Digital Manufacturing and Automation(2010 数字制造与自动化国际会议 ICDMA 2010)

会议地点: 长沙

会议语种:英文

页码: 858-861

在线出版日期: 2010-12-18（万方平台首次上网日期，不代表论文的发表时间）