Monolithic Integration of GaN-based LEDs

摘要：

The technology of monolithically integrated GaN-based light-emitting diodes (LEDs) is reported. First, the technology details to realize monolithic integration are described, including the circuit design for highvoltage and alternating current (AC) operation and the technologies for device isolation. The performances of the fabricated monolithic LED arrays are then demonstrated. A monolithic series array with totally 40 LEDs exhibited expected operation function under AC bias. The operation voltage of the array is 72 V when 20 LEDs were connected in series. Some modified circuit designs for high-voltage operation and other monolithic LED arrays are finally reviewed.

作者: Jin-Ping Ao

作者单位: Institute of Technology and Science, The University of Tokushima 2-1 Minami-Josanjima,Tokushima 770-8506, Japan

会议类型: 国际会议

会议名称: 3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)

会议地点: 武汉

会议语种:英文

页码: 1-4

在线出版日期: 2010-11-03（万方平台首次上网日期，不代表论文的发表时间）