The study of electronic structures and optical properties of Al-doped GaN

摘要：

The electronic structures and optical properties of undoped and Al-doped GaN (AlxGa1-xN, x=0.0625, 0.125, 0.25) have been studied based on generalized gradient approximation (GGA) method of density functional theory (DFT). The differences of the electronic structures and optical properties of undoped and Aldoped GaN have been discussed in detail. The result shows: according to total density of state of undoped and Al-doped GaN, the conduction band becomes width and moves to high energy level with gradual increase concentration of Al impurity. Impurity energy band isnt found in energy band structures of AlxGa1-xN, the same as energy band structures of undoped GaN, but the band gaps gradually become wide with increase of Al impurity. Absorption spectra of undoped and Aldoped GaN of main absorption peak moves to high energy level with increase of Al impurity. GaN super

关键词： cell Al-doped DFT optical property

作者: Enling Li Liping Hou Lisha Li Mancang Liu Meng Xi Xiqiang Wang Yuanbin Dai

作者单位: Sciences School, Xian University of Technology, Xian, China 710054 Physics, Northwest University, Xian, China 710068

会议类型: 国际会议

会议名称: 3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)

会议地点: 武汉

会议语种:英文

页码: 1-6

在线出版日期: 2010-11-03（万方平台首次上网日期，不代表论文的发表时间）