Fabrication of the p-MgZnO/ZnO/n-MgZnO double-heterojunction by MOCVD
The p-MgZnO/i-ZnO/n-MgZnO double-heterojuntion was fabricated on GaAs (100) substrate by photonassistant metal-organic chemical vapor deposition. We can found an obvious ultraviolet peak in the electroluminescence spectra and the causation has been discussed. The effects of the thickness of ZnO interlayer on the junctions properties was also analyzed. The conclusion indicated the intensity of the UV peak would increase by decreasing the thickness of ZnO interlayer. The thickness of ZnO layer had important impact on the optical qualities of the double-heterojunction.
MgZnO heterojunction EL MOCVD
Xin Dong Hui Wang Jin Wang Wang Zhao Long Zhao Zhifeng Shi
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, ChangChun 130012, Peoples Republic of China
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-10
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）