Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate
This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal qualiry and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature, lμm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050℃. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.
Meng Wei Xiaoliang Wang Xu Pan Hongling Xiao Cuimei Wang Minglan Zhang Zhanguo Wang
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O.Box 912, Be Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, B Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, B Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sc
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-12
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）