Improved light extracion efficiency in AlGalnP-Based Diodes (LEDs) by applying a nanohole structure on GaP window layer

摘要：

In this letter, to enhance light efficiency of AlGalnP-based LEDs, a nanohole structure was applied to GaP window layer by using self-assemble metal layer nano-masks and inductively coupled plasma (ICP). This method has the potential advantage because both the size and density of the nanoholes are controllable. The density of nanoholes varied from 5×108 to 2.8×l08 cm-2 and size varied from 180-430 nm while increasing rapid thermal annealing temperature from 350-500℃. By using this surface texturing method, the light intensity and light output power of AlGalnP-based LEDs with textured surface (LED-Ⅱ) increases 27％ and 15％ comaparing to LEDs with flat surface (LED-Ⅰ), respectively.

作者: MA Li JIANG Wen-Jing ZOU De-Shu Meng Li-Li SHEN Guang-Di

作者单位: Key Laboratory of Opto-electronics Technology (Beijing University of Technology),Ministry of Education, Beijing University of Technology, 100 Ping Le Yuan,Chaoyang District, Beijing 100124, China

会议类型: 国际会议

会议名称: 3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)

会议地点: 武汉

会议语种:英文

页码: 1-6

在线出版日期: 2010-11-03（万方平台首次上网日期，不代表论文的发表时间）