A study of GaN-based LED structure etching using inductively coupled plasma
GaN as a wide band gap semiconductor has been employed to fabricate optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs). Recently several different dry etching techniques for GaN-based materials have been developed. ICP etching is attractive because of its superior plasma uniformity and strong controllability. Most previous reports emphasized on the ICP etching characteristics of single GaN film. In this study dry etching of GaNbased LED structure was performed by inductively coupled plasmas (ICP) etching with Cl2 as the base gas and BC13 as the additive gas. The effects of the key process parameters such as etching gases flow rate, ICP power, RF power and chamber pressure on the etching properties of GaN-based LED structure including etching rate, selectivity, etched surface morphology and sidewall was investigated. Etch depths were measured using a depth profilometer and used to calculate the etch rates. The etch profiles were observed with a scanning electron microscope (SEM).
Pei Wang Bin Cao Zhiyin Gan Sheng Liu
School of Mechanical Engineering, Huazhong University of Science & Technology,1037 Luoyu Road, Wuhan School of Mechanical Engineering, Huazhong University of Science & Technology,1037 Luoyu Road, Wuhan
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-5
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）