An Equivalent Circuit Model for Separate Absorption Grading Charge Multiplication Avalanche Photodiode
With the scale of microwave photonics system getting larger and the structure of it getting more complex, the CAD tools and accurate circuit models have become essential for designers, since difficulty for system design increases greatly. In this work, an equivalent circuit model for separate absorption grading charge multiplication avalanche photodiode (SAGCM APD) has been proposed. The model is applied to simulate the device performance and the simulating results show a well reasonable agreement with the physical model calculation and experimental data. A detailed comparison has been made for InP/InGaAs, InAlAs/InGaAs and Si/Ge APD with different structures. Our results show that Si/Ge APD is the most promising candidate for high performance optical communication system.
Yanli Zhao Qiuyan Mo
Wuhan National Laboratory for Optoelectronics, School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074,China
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-8
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）