Optimizing interdigitated contact scheme of GaN-based light-emitting diodes
The unapt design of electron layout involved in the fabrication of light emitting diode(LED) chip, especially for conventional mesa-etch structure, will cause a series of problems including electrical, optical, and thermal issues. The effects of the figure number of p- and n- electrodes as well as their spacing and width on the performance of the mesh-etched GaN-based LED chip with interdigitated contact scheme electrode had been studied and optimized by numerical simulation. The results showed that operation voltage decreased with increasing the numbers or/and the width of electrode, meanwhile the current became more uniform. However, the wall-plug efficiency droop due to the decrease of active layer and the shading for emitted light. A uniform current distribution was attained and local overheating alleviated when the distance between p- and n- electrode was about 250um using a small LED chip with 2 and 1 of n- and p-electrode, respectively. At the same time the output power reached its maximum.
Bin Cao Pei Wang Zhiyin Gan Wei Wei Sheng Liu
Wuhan National Lab for Optoelectronics, 1037 Luoyu Road, Wuhan 430074, China School of Mechanical Science and Engineering, Huazhong University of Science & Technolo Wuhan National Lab for Optoelectronics, 1037 Luoyu Road, Wuhan 430074, China School of Mechanical
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-6
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）