The influence of using different substrates on the structural and optical characteristics of Bi2VO5.5 thin films
The BVO thin films have been successfully grown on Si (100) and SiO/Si (100) substrates via sol-gel technique followed by rapid thermal annealing at 650 ℃. The crystalline nature of the films has been studied by X-ray diffraction and indicates all the films are well-crystallized. Atomic force microscopy was used to study the surface morphology of the BVO thin films which shows the films are compact and homogeneous. The BVO film with SiO2 buffer layer has a larger grain size and lower root mean square roughness than that directly grown on Si. The Raman spectra measurement in the range of 300-1500 cm-1 reveals that the buffer SiO2 layer definitely influences the structure of BVO thin films. The optical properties of the BVO thin films are investigated using spectroscopic ellipsometric in the wavelength range of 400-900 nm. In the visible range, the refractive index of the film is about 2.42 and the extinction coefficient is 0.036.
F Chen H M Deng D J Huang P X Yang J H Chu
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of electronics, Eas Key Laboratory for Material Microstructures of Shanghai University, Shanghai University, 99 Shangda
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-5
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）