The investigation of preparation by magnetron sputtering and application in amorphous silicon solar cells of pyramid-like textured ZnO:Al thin film
In this paper, the pyramid-like texture aluminum doped zinc oxide (ZnO:Al) thin films was prepared by adding negative bias voltage and controlling the sputtering parameters properly, and the lowest resistivity of 7.8x10-4·cm, light transmittance above 83％ was achieved, respectively. Instead of the traditional tin oxide doped with fluorine (SnO2:F), using the ZnO:Al film as a front electrode transparent conducting oxide (TCO) layer for hydrogenated amorphous silicon (a-Si:H) solar cells, the higher contact potential barrier of ZnO:Al /p-a-SiC:H have to be overcome. In this paper, we attempt to resolve the contact potential barrier by inserting a buffer layer of microcrystalline silicon (uc-Si:H) between ZnO:Al layer and pSiC: H windows layer, and its efficiency increases from 7.6％ for the SnO2:F TCO to 8.3％ for the ZnO:Al /uc-Si:H TCO.
Y H Hu H J Xu H Gao Y C Chen L F Wang W H Jiang
Department of Mechanical and Electronic Engineering, Jingdezhen Ceramics Institution, Jingdezhen, 333403, China
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-5
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）