Characteristics of GaN-based p-i-n photodetector at low temperature and performances of MCT/GaN-based infrared/ultraviolet dual-colour detector
The performances of GaN-based p-i-n photodiode at low temperature are studied The current-voltage characteristics at different temperatures were measured. The turn-on voltage of GaN-based p-i-n detector decreases from 3.7 V to 3.0 V as temperature increases from 91 K to 286 K. The series resistance and ideality factor of the GaN-based detector is calculated. Values of series resistance are 1508 Ω. 453 Ω, 353 Ω and 295 Ω, at 91 K, 174 K, 224 K and 286 K, respectively .The values of ideality factors are 43.7, 15.4, 12.6 and 11.9, respectively. The spectral response of GaN p-i-n photodiode was measured at different temperature .The results show that with the temperature decreasing, the peak response wavelength gets shorter, and the responsibility gets smaller. The structure of ultraviolet/infrared MCT (mercury cadmium tellurium)/ GaN-based dual-colour detector is designed. MCT medium wave photovoltage photodetector is employed in dual-colour detector. The responsivities of GaN-based detector and MCT-based detector were measured. The dual-colour device can realize the detection of die light between 240 nm and 330 nm, and light between 3.2 urn and 5.8 μm.
Fuhao Liu Jintong Xu Ping Wang Chao Li Dahan Qian Nili Wang Xiangyang Li
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Ac Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics,
国际会议
3rd International Photonics & OptoElectronics Meetings(第三届国际光子与光电子学会议 POEM 2010)
武汉
英文
1-7
2010-11-03（万方平台首次上网日期，不代表论文的发表时间）